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IRLL014 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRLL014 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91319 2 S-81392-Rev. A, 07-Jul-08 IRLL014, SiHLL014 Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 60 °C/W Maximum Junction-to-Case (Drain) RthJC -- 40 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 µA VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 1.6 Ab - - 0.20 Ω VGS = 4.0 V ID = 1.4 Ab - - 0.28 Forward Transconductance gfs VDS = 25 V, ID = 1.6 A 3.2 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 400 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -42 - Total Gate Charge Qg VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b -- 8.4 nC Gate-Source Charge Qgs -- 3.5 Gate-Drain Charge Qgd -- 6.0 Turn-On Delay Time td(on) VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω, see fig. 10b -9.3 - ns Rise Time tr - 110 - Turn-Off Delay Time td(off) -17 - Fall Time tf -26 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.0 - nH Internal Source Inductance LS -6.0 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 2.7 A Pulsed Diode Forward Currenta ISM -- 22 Body Diode Voltage VSD TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb - 65 130 ns Body Diode Reverse Recovery Charge Qrr - 0.33 0.65 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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