SI1413EDH_08 datasheet(2/6 Pages) VISHAY

부품명	SI1413EDH

상세설명	P-Channel 20-V (D-S) MOSFET

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Si1413EDH

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71396

S-03186—Rev. A, 05-Mar-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –100 mA

–0.45

V

VDS = 0 V, VGS = "4.5 V

"1.5

mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"10

mA

VDS = –16 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–4

A

VGS = –4.5 V, ID = –2.9 A

0.095

0.115

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –2.4 A

0.125

0.155

W

DS(on)

VGS = –1.8 V, ID = –1.0 A

0.180

0.220

Forward Transconductancea

gfs

VDS = –10 V, ID = –2.9 A

6

S

Diode Forward Voltagea

VSD

IS = –1.4 A, VGS = 0 V

–0.80

–1.1

V

Dynamicb

Total Gate Charge

Qg

5.6

8

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –2.9 A

1.2

nC

Gate-Drain Charge

Qgd

1.2

Turn-On Delay Time

td(on)

0.75

1.1

Rise Time

tr

VDD = –10 V, RL = 10 W

1.6

2.3

m

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 10 W

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

3.9

5.5

ms

Fall Time

tf

3.9

5.5

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.01

100

10,000

Gate Current vs. Gate-Source Voltage

0

3

6

9

12

15

18

Gate-Current vs. Gate-Source Voltage

VGS – Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS – Gate-to-Source Voltage (V)

0

36

9

12

TJ = 25_C

TJ = 150_C

8

6

4

2

0

유사한 부품 번호 - SI1413EDH_08

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI1413EDH	108Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. C, 27-Jul-05

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유사한 부품 번호 - SI1413EDH_08

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