SI1450DH-T1-E3 datasheet(2/7 Pages) VISHAY

부품명	SI1450DH-T1-E3

상세설명	N-Channel 8-V (D-S) MOSFET

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Document Number: 74275

S-62079-Rev. A, 23-Oct-06

Vishay Siliconix

Si1450DH

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

8V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

8.32

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 2.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.3

1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

ns

Zero Gate Voltage Drain Current

IDSS

VDS = 8 V, VGS = 0 V

1

µA

VDS = 8 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≤ 5 V, VGS = 4.5 V

15

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 4.0 A

0.039

0.047

Ω

VGS = 2.5 V, ID = 4.0 A

0.042

0.051

VGS = 1.8 V, ID = 4.0 A

0.048

0.058

VGS = 1.5 V, ID = 1.28 A

0.053

0.069

Forward Transconductancea

gfs

VDS = 4 V, ID = 4.0 A

15.5

S

Dynamicb

Input Capacitance

Ciss

VDS = 4 V, VGS = 0 V, f = 1 MHz

535

pF

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

61

Total Gate Charge

Qg

VDS = 4 V, VGS = 5 V, ID = 4.0 A

4.7

7.05

nC

VDS = 4 V, VGS = 4.5 V, ID = 4.0 A

4.24

6.4

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

0.810

Gate Resistance

Rg

f = 1 MHz

7.3

11

Ω

Turn-On Delay Time

td(on)

VDD = 4 V, RL = 1.11 Ω

ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω

812

ns

Rise Time

tr

73

110

Turn-Off Delay Time

td(off)

18

27

Fall Time

tf

57.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

2.6

A

Pulse Diode Forward Current

ISM

15

Body Diode Voltage

VSD

IS = 2.6 A, VGS = 0 V

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C

14.3

21.45

ns

Body Diode Reverse Recovery Charge

Qrr

3.6

5.4

nC

Reverse Recovery Fall Time

ta

6.8

ns

Reverse Recovery Rise Time

tb

7.5

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