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SI1450DH-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI1450DH-T1-E3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Vishay Siliconix Si1450DH Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 8V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 8.32 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.3 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 8 V, VGS = 0 V 1 µA VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V 15 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 4.0 A 0.039 0.047 Ω VGS = 2.5 V, ID = 4.0 A 0.042 0.051 VGS = 1.8 V, ID = 4.0 A 0.048 0.058 VGS = 1.5 V, ID = 1.28 A 0.053 0.069 Forward Transconductancea gfs VDS = 4 V, ID = 4.0 A 15.5 S Dynamicb Input Capacitance Ciss VDS = 4 V, VGS = 0 V, f = 1 MHz 535 pF Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 61 Total Gate Charge Qg VDS = 4 V, VGS = 5 V, ID = 4.0 A 4.7 7.05 nC VDS = 4 V, VGS = 4.5 V, ID = 4.0 A 4.24 6.4 Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 0.810 Gate Resistance Rg f = 1 MHz 7.3 11 Ω Turn-On Delay Time td(on) VDD = 4 V, RL = 1.11 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω 812 ns Rise Time tr 73 110 Turn-Off Delay Time td(off) 18 27 Fall Time tf 57.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.6 A Pulse Diode Forward Current ISM 15 Body Diode Voltage VSD IS = 2.6 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C 14.3 21.45 ns Body Diode Reverse Recovery Charge Qrr 3.6 5.4 nC Reverse Recovery Fall Time ta 6.8 ns Reverse Recovery Rise Time tb 7.5 |
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