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SI1450DH-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI1450DH-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 3 Vishay Siliconix Si1450DH TYPICAL CHARACTERISTICS 25 °C, unless noted Output Characteristics rDS(on) vs. Drain Current Gate Charge 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) V = 5 thru 2 V GS V = 1.5 V GS V = 1 V GS 0.00 0.02 0.04 0.06 0.08 0.10 0 3 6 9 12 15 VGS = 1.5 V ID – Drain Current (A) VGS = 4.5 V VGS = 1.5 V VGS = 2.5 V 0 1 2 3 4 5 Qg – Total Gate Charge (nC) 5 3 2 0 6 ID = 4.4 A VDS = 4 V VGS = 6.4 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 0.0 0.5 1.0 1.5 2.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS – Gate-to-Source Voltage (V) Crss 0 200 400 600 800 0246 8 Coss Ciss VDS – Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) VGS = 4.5 V ID = 4.6 A VGS = 2.5 V, ID = 4.4 A VGS = 1.5 V ID = 1.2 A VGS = 1.8 V, ID = 4.25 A |
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