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SI1539DL 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI1539DL 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page Si1539DL Vishay Siliconix www.vishay.com 2-2 Document Number: 71250 S-21374—Rev. B, 12-Aug-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static VDS = VGS, ID = 250 mA N-Ch 1.0 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA P-Ch -1.0 V " N-Ch "100 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V P-Ch "100 nA VDS = 24 V, VGS = 0 V N-Ch 1 VDS = -24 V, VGS = 0 V P-Ch -1 m Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C N-Ch 5 mA VDS = -24 V, VGS = 0 V, TJ = 85_C P-Ch -5 VDS w 5 V, VGS = 10 V N-Ch 1.0 On-State Drain Currenta ID(on) VDS p -5 V, VGS = -10 V P-Ch -1.0 A VGS = 10 V, ID = 0.59 A N-Ch 0.410 0.480 VGS = -10 V, ID = -0.42 A P-Ch 0.800 0.940 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 0.2 A N-Ch 0.600 0.700 W VGS = -4.5 V, ID = -0.2 A P-Ch 1.5 1.700 VDS = 15 V, ID = 0.59 A N-Ch 0.75 Forward Transconductancea gfs VDS = -15 V, ID = -0.42 A P-Ch 0.5 S IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2 Diode Forward Voltagea VSD IS = -0.23 A, VGS = 0 V P-Ch -0.86 -1.2 V Dynamicb N-Ch 0.86 1.4 Total Gate Charge Qg N-Channel P-Ch 0.9 1.4 N-Channel VDS = 15 V, VGS = 10 V, ID = 0.59 A N-Ch 0.24 Gate-Source Charge Qgs P-Channel P-Ch 0.21 nC VDS = -15 V, VGS = -10 V, ID = -0.42 A N-Ch 0.08 Gate-Drain Charge Qgd P-Ch 0.17 N-Ch 5 10 Turn-On Delay Time td(on) P-Ch 4 10 N-Channel W N-Ch 8 15 Rise Time tr VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W P-Ch 8 15 P-Channel W N-Ch 8 15 Turn-Off Delay Time td(off) P-Channel VDD = -15 V, RL = 30 W I ^ -0.5 A, V = -10 V, R = 6 W P-Ch 5 10 ns ID ^ -0.5 A, VGEN = -10 V, RG = 6 W N-Ch 7 15 Fall Time tf P-Ch 7 15 Source-Drain IF = 0.23 A, di/dt = 100 A/ms N-Ch 15 30 Source-Drain Reverse Recovery Time trr IF = -0.23 A, di/dt = 100 A/ms P-Ch 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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