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SI1988DH-T1-E3 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI1988DH-T1-E3 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 5 Vishay Siliconix Si1988DH TYPICAL CHARACTERISTICS 25 °C, unless noted *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 TC – Case Temperature (°C) Package Limited Power Derating 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 TC – Case Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 170 °C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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