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SI1988DH-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI1988DH-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 3 Vishay Siliconix Si1988DH TYPICAL CHARACTERISTICS 25 °C, unless noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 1 V VDS – Drain-to-Source Voltage (V) VGS = 1.5 V VGS = 5 thru 2 V 0.100 0.150 0.200 0.250 0.300 0.350 0.400 012 3 4 VGS – Gate-to-Source Voltage (V) VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID = 1.6 A Qg – Total Gate Charge (nC) VDS = 10 V VDS = 16 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0.9 1.2 1.5 TC = 125 °C VGS – Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C 0 40 80 120 160 0 4 8 12 16 20 Coss Ciss VDS – Drain-to-Source Voltage (V) Crss 0.60 0.80 1.00 1.20 1.40 1.60 1.80 - 50 - 25 0 25 50 75 100 125 150 VGS = 1.8, 2.5, 4.5 V TJ – Junction Temperature (°C) ID = 1.6 A |
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