전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SI2301CDS-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI2301CDS-T1-GE3
상세설명  P-Channel 20-V (D-S) MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2301CDS-T1-GE3 데이터시트(HTML) 2 Page - Vishay Siliconix

  SI2301CDS-T1-GE3 Datasheet HTML 1Page - Vishay Siliconix SI2301CDS-T1-GE3 Datasheet HTML 2Page - Vishay Siliconix SI2301CDS-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI2301CDS-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI2301CDS-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI2301CDS-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.vishay.com
2
Document Number: 68741
S-81446-Rev. A, 23-Jun-08
Vishay Siliconix
Si2301CDS
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 18
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
2.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
- 1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
- 6
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 2.8 A
0.090
0.112
Ω
VGS = - 2.5 V, ID = - 2.0 A
0.110
0.142
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 2.8 A
2.0
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
405
pF
Output Capacitance
Coss
75
Reverse Transfer Capacitance
Crss
55
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A
5.5
10
nC
VDS = - 10 V, VGS = - 2.5 V, ID = - 3 A
3.3
6
Gate-Source Charge
Qgs
0.7
Gate-Drain Charge
Qgd
1.3
Gate Resistance
Rg
f = 1 MHz
6.0
Ω
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 10 Ω
ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω
11
20
ns
Rise Time
tr
35
60
Turn-Off Delay Time
td(off)
30
50
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 1.3
A
Pulse Diode Forward Currenta
ISM
- 10
Body Diode Voltage
VSD
IS = - 0.7 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C
30
50
ns
Body Diode Reverse Recovery Charge
Qrr
25
50
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
15


유사한 부품 번호 - SI2301CDS-T1-GE3

제조업체부품명데이터시트상세설명
logo
VBsemi Electronics Co.,...
SI2301CDS-T1-GE3 VBSEMI-SI2301CDS-T1-GE3 Datasheet
1Mb / 9P
   P-Channel 20-V (D-S) MOSFET
More results

유사한 설명 - SI2301CDS-T1-GE3

제조업체부품명데이터시트상세설명
logo
Vishay Siliconix
SI9400DY VISHAY-SI9400DY Datasheet
58Kb / 4P
   P-Channel 20-V (D-S) MOSFET
Rev. K, 02-Mar-98
SI9424BDY VISHAY-SI9424BDY Datasheet
44Kb / 5P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 07-Oct-02
SI8407DB VISHAY-SI8407DB Datasheet
69Kb / 6P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 17-Jan-05
SI7401DN VISHAY-SI7401DN Datasheet
240Kb / 3P
   P-Channel 20-V (D-S) MOSFET
31-May-01
SI7403BDN VISHAY-SI7403BDN Datasheet
106Kb / 8P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 21-Mar-05
SIS407DN-T1-GE3 VISHAY-SIS407DN-T1-GE3 Datasheet
548Kb / 13P
   P-Channel 20 V (D-S) MOSFET
Rev. B, 06-Sep-10
SI4477DY-T1-GE3 VISHAY-SI4477DY-T1-GE3 Datasheet
261Kb / 10P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 18-May-09
SIA431DJ VISHAY-SIA431DJ Datasheet
221Kb / 9P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 21-May-12
SI1077X VISHAY-SI1077X Datasheet
183Kb / 8P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 24-Dec-12
SI5457DC VISHAY-SI5457DC Datasheet
244Kb / 11P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 06-Sep-10
logo
Analog Power
AM4421P ANALOGPOWER-AM4421P Datasheet
423Kb / 5P
   P-Channel 20-V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com