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SI3442BDV 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 5 page Vishay Siliconix Si3442BDV Document Number: 72504 S-71947-Rev. D, 10-Sep-07 www.vishay.com 1 N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) 20 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 TSOP-6 Top V iew 6 4 1 2 3 5 2.85 mm 3 mm Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free) Marking Code: 2Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET Notes: a. Surface Mounted on FR4 Board, t ≤ 5 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 4.2 3.0 A TA = 70 °C 3.4 2.4 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduction)a IS 1.4 0.72 Maximum Power Dissipationa TA = 25 °C PD 1.67 0.86 W TA = 70 °C 1.07 0.55 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 75 100 °C/W Steady State 120 145 Maximum Junction-to-Foot (Drain) Steady State RthJF 70 85 RoHS COMPLIANT |
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