SI3805DV-T1-E3 datasheet(3/10 Pages) VISHAY

부품명	SI3805DV-T1-E3

상세설명	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Document Number: 68912

S-82297-Rev. A, 22-Sep-08

www.vishay.com

3

Vishay Siliconix

Si3805DV

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 1.2

A

Pulse Diode Forward Current

ISM

- 15

Body Diode Voltage

VSD

IS = - 1.0 A, VGS = 0 V

- 0.75

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 2.4 A, dI/dt = 100 A/µs, TJ = 25 °C

23

35

ns

Body Diode Reverse Recovery Charge

Qrr

14

21

nC

Reverse Recovery Fall Time

ta

11

ns

Reverse Recovery Rise Time

tb

12

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 1 A

0.42

0.50

V

IF = 1 A, TJ = 125 °C

0.36

0.43

Maximum Reverse Leakage Current

Irm

Vr = 5 V

0.015

0.08

mA

Vr = 5 V, TJ = 85 °C

0.50

5.00

Vr = 20 V

0.02

0.10

Vr = 20 V, TJ = 85 °C

0.7

7.00

Vr = 20 V, TJ = 125 °C

550

Junction Capacitance

CT

Vr = 10 V

60

pF

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VBsemi Electronics Co.,...	SI3805DV-T1-GE3	568Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET

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SI3805DV-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix

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유사한 부품 번호 - SI3805DV-T1-E3

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