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SI3879DV-T1-E3 데이터시트(PDF) 7 Page - Vishay Siliconix |
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SI3879DV-T1-E3 데이터시트(HTML) 7 Page - Vishay Siliconix |
7 / 10 page Vishay Siliconix Si3879DV Document Number: 74958 S-71290–Rev. A, 02-Jul-07 www.vishay.com 7 New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (sec) 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 0.05 Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1 0.1 0.01 0.02 Single Pulse |
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