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SI5486DU-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI5486DU-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73783 S-81449-Rev. B, 23-Jun-08 Vishay Siliconix Si5486DU TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 40 1 10 TJ = 150 °C VSD - Source-to-Drain Voltage (V) TJ = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 012345 ID = 7.7 A VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0.010 0.015 0.025 0.030 0.035 0.020 0.040 0 30 40 10 20 Time (s) 1 1000 0.1 0.01 0.001 10 100 50 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 100 0.01 10 0.1 100 µs TA = 25 °C Single Pulse 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 s 10 s Limited by RDS(on)* 10 1 ms BVDSS Limited |
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