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SI5517DU-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI5517DU-T1-GE3 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si5517DU Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits PRODUCT SUMMARY VDS RDS(on) (Ω) ID (A) a Qg N-Channel 20 0.039 at VGS = 4.5 V 6 6 nc 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 P-Channel - 20 0.072 at VGS = - 4.5 V - 6 5.5 nc 0.100 at VGS = - 2.5 V - 6 0.131 at VGS = - 18 V - 6 Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View Marking Code EA XXX Lot Traceability and Date Code Part # Code PowerPAK ChipFET Dual 8 7 6 5 1 2 3 4 D1 D1 D2 D2 S1 G1 S2 G2 N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W for both channels. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6a - 6a A TC = 70 °C 6a - 6a TA = 25 °C 7.2b, c - 4.6b, c TA = 70 °C 5.8b, c - 3.7b, c Pulsed Drain Current IDM 20 - 15 Source-Drain Current Diode Current TC = 25 °C IS 6.9 - 6.9 TA = 25 °C 1.9b, c - 1.9b, c Maximum Power Dissipation TC = 25 °C PD 8.3 8.3 W TC = 70 °C 5.3 5.3 TA = 25 °C 2.3b, c 2.3b, c TA = 70 °C 1.5b, c 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 45 55 45 55 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12 15 12 15 RoHS COMPLIANT |
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