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SI5517DU-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 SI5517DU-T1-GE3
상세설명  N- and P-Channel 20-V (D-S) MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Vishay Siliconix
Si5517DU
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
APPLICATIONS
Complementary MOSFET for Portable Devices
- Ideal for Buck-Boost Circuits
PRODUCT SUMMARY
VDS
RDS(on) (Ω)
ID (A)
a
Qg
N-Channel
20
0.039 at VGS = 4.5 V
6
6 nc
0.045 at VGS = 2.5 V
6
0.055 at VGS = 1.8 V
6
P-Channel
- 20
0.072 at VGS = - 4.5 V
- 6
5.5 nc
0.100 at VGS = - 2.5 V
- 6
0.131 at VGS = - 18 V
- 6
Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
Marking Code
EA
XXX
Lot Traceability
and Date Code
Part # Code
PowerPAK ChipFET Dual
8
7
6
5
1
2
3
4
D1
D1
D2
D2
S1
G1
S2
G2
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W for both channels.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
6a
- 6a
A
TC = 70 °C
6a
- 6a
TA = 25 °C
7.2b, c
- 4.6b, c
TA = 70 °C
5.8b, c
- 3.7b, c
Pulsed Drain Current
IDM
20
- 15
Source-Drain Current Diode Current
TC = 25 °C
IS
6.9
- 6.9
TA = 25 °C
1.9b, c
- 1.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
8.3
8.3
W
TC = 70 °C
5.3
5.3
TA = 25 °C
2.3b, c
2.3b, c
TA = 70 °C
1.5b, c
1.5b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
45
55
45
55
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
12
15
12
15
RoHS
COMPLIANT


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