SI5915BDC-T1-E3 datasheet(1/7 Pages) VISHAY

부품명	SI5915BDC-T1-E3

상세설명	Dual P-Channel 8-V (D-S) MOSFET

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Vishay Siliconix

Si5915BDC

New Product

Document Number: 70484

S-71325–Rev. A, 02-Jul-07

www.vishay.com

1

Dual P-Channel 8-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

Qg (Typ)

- 8

0.070 at VGS = - 4.5 V

4a

5 nC

0.086 at VGS = - 2.5 V

4a

0.145 at VGS = - 1.8 V

3.6

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 4a

A

TC = 70 °C

- 4a

TA = 25 °C

- 4a, b, c

TA = 70 °C

- 3.2b, c

Pulsed Drain Current

IDM

- 10

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 4a

TA = 25 °C

- 1.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

TC = 70 °C

2

TA = 25 °C

1.7b, c

TA = 70 °C

1.1b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 5 sec

RthJA

62

74

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

33

40

1206-8 ChipFET

® (Dual)

Bottom View

S1

G1

S2

G2

D1

D2

1

Ordering Information: Si5915BDC-T1-E3 (Lead (Pb)-free)

Marking Code

DG

XXX

Lot Traceability

and Date Code

Part #

Code

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

RoHS

COMPLIANT

FEATURES

•TrenchFET® Power MOSFET

•

Low Thermal Resistance

•

40 % Smaller Footprint than TSOP-6

APPLICATIONS

•

Load Switch or Battery Switch for Portable Devices

유사한 부품 번호 - SI5915BDC-T1-E3

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Vishay Siliconix	SI5915DC	98Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 05-Aug-02
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유사한 설명 - SI5915BDC-T1-E3

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SI5915BDC-T1-E3 데이터시트(PDF) 1 Page - Vishay Siliconix

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