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SI5915BDC-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI5915BDC-T1-E3
상세설명  Dual P-Channel 8-V (D-S) MOSFET
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Document Number: 70484
S-71325–Rev. A, 02-Jul-07
Vishay Siliconix
Si5915BDC
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 8
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 8.3
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
2.1
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
- 1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 85 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ 4 V, VGS = - 4.5 V
- 10
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 3.3 A
0.058
0.070
Ω
VGS = - 2.5 V, ID = - 2.7 A
0.086
0.104
VGS = - 1.8 V, ID = - 0.7 A
0.120
0.145
Forward Transconductance
gfs
VDS = - 4 V, ID = - 3.3 A
9ms
Dynamicb
Input Capacitance
Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
420
pF
Output Capacitance
Coss
160
Reverse Transfer Capacitance
Crss
100
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 8 V, ID = - 4.1 A
914
nC
VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A
57.5
Gate-Source Charge
Qgs
0.7
Gate-Drain Charge
Qgd
0.7
Gate Resistance
Rg
f = 1 MHz
7
Ω
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
12
20
ns
Rise Time
tr
30
45
Turn-Off DelayTime
td(off)
20
30
Fall Time
tf
715
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω
510
Rise Time
tr
12
20
Turn-Off DelayTime
td(off)
20
30
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 4
A
Pulse Diode Forward Current
ISM
- 10
Body Diode Voltage
VSD
IS = - 3.3 A, VGS = 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 3.3 A, di/dt = 100 A/µs,
TJ = 25 °C
60
90
nC
Body Diode Reverse Recovery Charge
Qrr
39
60
ns
Reverse Recovery Fall Time
ta
20
Reverse Recovery Rise Time
tb
40


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