전자부품 데이터시트 검색엔진 |
|
TSHG6210 데이터시트(PDF) 3 Page - Vishay Siliconix |
|
TSHG6210 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 81869 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.1, 04-Sep-08 201 TSHG6210 High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength Fig. 8 - Relative Radiant Intensity vs. Angular Displacement 100 1000 0.01 0.1 1.0 10 100 t P - Pulse Duration (ms) 16031 t P/T = 0.01 0.05 0.2 0.5 0.1 0.02 T amb < 50 °C 18873 1000 100 10 1 V F - Forward Voltage (V) 02 4 t P = 100 µs t P/T = 0.001 13 1 10 100 1000 10 000 110 100 1000 t P = 0.1 ms 21307 I F - Forward Current (mA) 0.1 1 10 100 1000 110 100 1000 16971 IF - Forward Current (mA) 800 850 λ- Wavelength (nm) 900 16972 0 0.25 0.5 0.75 1.0 1.25 21111 0.6 0 0.2 0.4 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 |
유사한 부품 번호 - TSHG6210 |
|
유사한 설명 - TSHG6210 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |