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TDA8218 데이터시트(PDF) 3 Page - STMicroelectronics |
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TDA8218 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS VCC1 =10 V, TAMB =25 oC (unless otherwise specified ) Symbol Parameter Min. Typ. Max. Unit SUPPLY (Pin 1) ICC1 Supply Current 15 22 mA VCC1 Supply Voltage 9 10 10.5 V VIDEO INPUT (Pin 20) V20 Reference Voltage (I20 = -1 µA) 1.4 1.75 2 V MWF Minimum Width of Frame Pulse (when synchronized with TTL signal) 50 µs LINE OSCILLATOR (Pin 11) LT11 Low Threshold Voltage 2.8 3.2 3.6 V HT11 High Threshold Voltage 5.4 6.6 7.8 V BI11 Bias Current 100 nA DR11 Discharge Impedance 1.0 1.4 1.8 k Ω FLP1 Free Running Line Period (R = 34.9k Ω Tied to VCC1, C = 2.2nF Tied to Ground) 62 64 66 µs OT11 Oscillator Threshold for Line Output Pulse Triggering 4.6 V ∆F ∆θ Horizontal Frequency Drift with Temperature (see application) 2 Hz/ oC LINE OUTPUT (Pin 17) LV17 Saturation Voltage (I17 = 200mA) 1.1 1.6 V OPW Output Pulse width (line period = 64 µs) 26 28 30 µs LINE SAWTOOTH INPUT (Pin 13) V13 Bias Voltage 1.8 2.4 3.2 V Z13 Input Impedance 4.5 5.8 8 k Ω PHASE DETECTOR (Pin 12) I12 Output Current During Synchro Pulse 250 350 500 µA RI12 Current Ratio (positive/negative) 0.95 1 1.05 LI12 Leakage Current -2 +2 µA CV12 Control RangeVoltage 2.60 7.10 V FRAME BLANKING GENERATOR (Pin 8) External R.C. Network (Typical values : R = 100k Ω, C = 22nF) Tfb Blanking Time (PIn 19, Tfb = K8 .R.C.) 1.35 ms K8 Time Blanking Coefficient 0.588 0.613 0.644 IO8 Output Current during the Frame Blanking : V8 = 2V - 0.2 1 µA II8 Input Current after the Frame Blanking : V8 = 7V 300 450 600 µA FRAME OSCILLATOR (Pin 2) LT2 Low Threshold Voltage 1.6 2.0 2.3 V HT2 High Threshold Voltage 2.6 3.1 3.6 V DIF2 LT2 - HT2 1.0 V BI2 Bias Current 30 nA DR2 Discharge Impedance 300 470 700 Ω FFP1 Free Running Frame Period (R = 866k Ω Tied to VCC1, C = 220nF Tied to Ground) 20.5 23 25 ms MFP Minimum Frame Period (I20 = -100 µA) with the Same RC 12.8 ms FPR Frame Period Ratio = FFP/MFP 1.7 1.8 1.9 TDA8218 3/9 |
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