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SS5P10 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SS5P10 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product SS5P9 & SS5P10 Vishay General Semiconductor Document Number: 88984 Revision: 29-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 90 V, 100 V IFSM 150 A VF at IF = 5.0 A 0.649 V IR 4.5 µA TJ max. 150 °C K 2 1 TO-277A (SMPC) Anode 1 Anode 2 Cathode K eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS5P9 SS5P10 UNIT Device marking code S59 S510 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (Fig. 1) IF(AV) 5.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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