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GSD2004WS-V 데이터시트(PDF) 2 Page - Vishay Siliconix |
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GSD2004WS-V 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85730 Rev. 1.5, 17-May-06 GSD2004WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on Fiberglass Substrate, see layout on second page Electrical Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on Fiberglass Substrate, see layout Package Dimensions in mm (Inches): SOD323 Parameter Test condition Symbol Value Unit Typical thermal resistance junction to ambient air RthJA 6501) °C/W Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 100 µA VBR 300 V Leakage current VR = 240 V IR 100 nA VR = 240 V, Tj = 150 °C IR 100 µA Forward voltage IF = 20 mA VF 0.83 0.87 V IF = 100 mA VF 1.00 V Diode capacitance VF = VR = 0, f = 1 MHz Ctot 5.0 pF Reverse recovery time IF = IR = 30 mA, Irr = 3.0 mA, RL = 100 Ω trr 50 ns 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) 2.85 (0.112) 2.50 (0.098) cathode bar 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) foot print recommendation: Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 |
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