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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TEA2025B 데이터시트(PDF) 3 Page - STMicroelectronics |
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TEA2025B 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page  ELECTRICAL CHARACTERISTICS (Tamb =25 °C, VCC = 9V, Stereo unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VS Supply Voltage 3 12 V IQ Quiescent Current 35 50 mA VO Quiescent Output Voltage 4.5 V AV Voltage Gain Stereo Bridge 43 49 45 51 47 53 dB ∆AV Voltage Gain Difference ±1dB Rj Input Impedance 30 K Ω PO Output Power (d = 10%) Stereo 8 (per channel) 9V 9V 6V 6V 6V 6V 3V 3V 12V 4 Ω 8 Ω 4 Ω 8 Ω 16 Ω 32 Ω 4 Ω 32 Ω 8 Ω 1.7 0.7 2.3 1.3 1 0.6 0.25 0.13 0.1 0.02 2.4 W Bridge 9V 6V 6V 3V 3V 8 Ω 4 Ω 8 Ω 16 Ω 32 Ω 4.7 2.8 1.5 0.18 0.06 W d Distortion Vs = 9V; RL =4 Ω Stereo Bridge 0.3 0.5 1.5 % SVR Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg =0 40 46 dB EN(IN) Input Noise Voltage RG =0 RG =10 4 Ω 1.5 3 3 6 mV CT Cross-Talk f = 1KHz, Rg = 10K Ω 40 52 dB Term. N ° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9 Figure 1: Bridge Application (Powerdip) Figure 2: Stereo Application (Powerdip) C6 C4 C8 C5 C7 C9 C2 C11 C3 C1 C10 TEA2025B - TEA2025D 3/9 |
유사한 부품 번호 - TEA2025B |
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유사한 설명 - TEA2025B |
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