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TPDV1225 데이터시트(PDF) 1 Page - STMicroelectronics |
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TPDV1225 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 5 page TPDV 625 ---> 1225 March 1995 ALTERNISTORS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) Tc = 85 °C25 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) tp = 2.5 ms 390 A tp = 8.3 ms 250 tp = 10 ms 230 I2tI2t value tp = 10 ms 265 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/ µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TOP 3 (Plastic) A1 A2 G . HIGH COMMUTATION : > 88 A/ms (400Hz) . INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB81734) . HIGH VOLTAGE CAPABILITY : VDRM = 1200 V DESCRIPTION Symbol Parameter TPDV Unit 625 825 1025 1225 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 800 1000 1200 V ABSOLUTE RATINGS (limiting values) FEATURES The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge cur- rent capability, this family is well adapted to power control on inductive load (motor, transformer...) 1/5 |
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