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TC1N914BM 데이터시트(PDF) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

부품명 TC1N914BM
상세설명  300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes
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제조업체  TAK_CHEONG [Tak Cheong Electronics (Holdings) Co.,Ltd]
홈페이지  http://www.takcheong.com/en/index.asp
Logo TAK_CHEONG - Tak Cheong Electronics (Holdings) Co.,Ltd

TC1N914BM 데이터시트(HTML) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

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Number: DB-050
June 2008 / E
Page 2
SEMICONDUCTOR
TAK CHEONG
®
Typical Characteristics
0
100
200
300
400
500
0
25
50
75
100
125
150
175
200
Temperature [
℃]
f = 1MHz
Ta = 25
℃
0.0
0.5
1.0
1.5
0
5
10
15
20
25
30
VR - Reverse Voltage [V]
Ta=25℃
110
120
130
140
150
160
1
10
100
IR - Reverse Current [uA]
Ta=25
℃
0
10
20
30
40
50
60
10
100
VR - Reverse Voltage [V]
Ta=25℃
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.001
0.100
10.000
1000.000
IF - Forw ard Current [m A]
0
200
400
600
800
1000
0.01
0.1
1
10
100
IF - Forw ard Current (m A)
Ta=125
℃
Ta=65
℃
Ta=25℃
Ta= -40
℃
Figure 3. Reverse Voltage vs Reverse Current
BV – 1.0uA to 100uA
Figure 4. Reverse Current vs Reverse Voltage
IR – 10V to 100V
Figure 5. Forward Voltage vs Forward Current
VF – 0.001mA to 800mA
Figure 6. Forward Voltage vs Ambient Temperature
VF – 0.01mA to 100mA (-40 to +125 Deg C)
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance


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