전자부품 데이터시트 검색엔진 |
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TD9944 데이터시트(PDF) 1 Page - Supertex, Inc |
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TD9944 데이터시트(HTML) 1 Page - Supertex, Inc |
1 / 4 page 1 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. S 1 D 1 G 1 D 1 S 2 D 2 G 2 D 2 1 2 3 4 8 7 6 5 SO-8 top view TD9944 Low Threshold Dual N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS /RDS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) SO-8 240V 6.0Ω 2.0V 1.0A TD9944TG Ordering Information Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Features ❏ Dual N-channel devices ❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Low Threshold DMOS Technology These dual low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well- proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers Telecom switches Pin Configuration Order Number/Package Note: See Package Outline section for dimensions. |
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