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KDB5690 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 KDB5690
상세설명  N-Channel PowerTrenchTMMOSFET
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KDB5690 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Single Pulse Drain-Source Avalanche Energy *
WDSS
VDD =30V, ID = 32A
80
mJ
Maximum Drain-Source Avalanche Current
IAR
32
A
Drain–Source Breakdown Voltage
BVDSS
VGS =0V, ID =250
A
60
V
Breakdown Voltage Temperature Coefficient
ID = 250
A, Referenced to 25
61
mV/
Zero Gate Voltage Drain Current
IDSS
VDS =48V, VGS =0V
1
A
Gate-Body Leakage, Forward
IGSSF
VGS =20V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS =-20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS =VGS,ID = 250
A
22.5
4
V
Gate Threshold Voltage Temperature
Coefficient
ID = 250
A, Referenced to 25
-6.4
mV/
VGS =10V, ID = 16 A
0.021 0.027
VGS =10V, ID =16A,TJ = 125
0.042 0.055
VGS =6V, ID =15 A,
0.024 0.032
On–State Drain Current
ID(on)
VGS =10V, VDS =5V
50
A
Forward Transconductance
gFS
VDS =5V, ID =16A
32
S
Input Capacitance
Ciss
1120
pF
Output Capacitance
Coss
160
pF
Reverse Transfer Capacitance
Crss
80
pF
Turn-On Delay Time
td(on)
10
18
ns
Turn-On Rise Time
tr
9
18
ns
Turn-Off Delay Time
td(off)
24
39
ns
Turn-Off Fall Time
tf
10
18
ns
Total Gate Charge
Qg
23
33
nC
Gate–Source Charge
Qgs
3.9
nC
Gate–Drain Charge
Qgd
6.8
nC
Maximum Continuous Drain-Source Diode
Forward Current
IS
32
A
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS = 16 A *
0.92
1.2
V
* Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
VDS =1V, ID =16A,VGS =10V *
m
RDS(on)
Static Drain-Source On-Resistance
VDD =30V, ID =1A,VGS =10V, RGEN
=6
*
VDS =25V, VGS =0V,f = 1.0MHz
KDB5690


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