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2SK3065 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 2SK3065
상세설명  Silicon N-Channel MOSFET
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK3065 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK3065 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
MOSFET
1
www.kexin.com.cn
1.80+0.1
-0.1
4.50+0.1
-0.1
0.53+0.1
-0.1
0.48+0.1
-0.1
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
SOT-89
Unit: mm
1. Base
2. Collector
3. Emiitter
1. Source
2. Drain
3. Gate
1
2
3
1Gate
2Drain
3Source
Silicon N-Channel MOSFET
2SK3065
Features
Low on resistance.
High-speed switching.
Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
Driving circuit is easy.
Easy to use parallel.
It is strong to an electrostatic discharge.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
2
A
Idp *
8
A
Power dissipation
TC=25
PD
0.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*PW
10
s,Duty Cycle
1%
Drain current
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain to source breakdown voltage
VDSS
ID=1mA,VGS=0
60
V
Drain cut-off current
IDSS
VDS=60V,VGS=0
10
A
Gate leakage current
IGSS
VGS=
20V,VDS=0
10
A
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
0.8
1.5
V
Forward transfer admittance
Yfs
VDS=10V,ID=1A
1.5
S
VGS=4V,ID=1A
0.25
0.32
VGS=2.5V,ID=1A
0.35
0.45
Input capacitance
Ciss
160
pF
Output capacitance
Coss
85
pF
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
ton
20
ns
Rise time
tr
50
ns
Turn-off delay time
toff
120
ns
Fall time
tf
70
ns
VDS=10V,VGS=0,f=1MHZ
ID=1A,VGS(on)=4V,RL=30
,VDD=30V,RG=10
Drain to source on-state resistance
RDS(on)
Marking
Marking
KE


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