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TC4420EOA 데이터시트(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC4420EOA 데이터시트(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 5 page 4-226 TELCOM SEMICONDUCTOR, INC. 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 1.8 — V VIL Logic 0 Low Input Voltage — 1.3 0.8 V VIN (Max) Input Voltage Range –5 — VDD+0.3 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage See Figure 1 VDD – 0.025 — — V VOL Low Output Voltage See Figure 1 — — 0.025 V RO Output Resistance, High IOUT = 10 mA, VDD = 18V — 2.1 2.8 Ω RO Output Resistance, Low IOUT = 10 mA, VDD = 18V — 1.5 2.5 Ω IPK Peak Output Current VDD = 18V (See Figure 5) — 6 — A IREV Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A Withstand Reverse Current t ≤ 300 µs Switching Time (Note 1) tR Rise Time Figure 1, CL = 2500 pF — 25 35 nsec tF Fall Time Figure 1, CL = 2500 pF — 25 35 nsec tD1 Delay Time Figure 1 — 55 75 nsec tD2 Delay Time Figure 1 — 55 75 nsec Power Supply IS Power Supply Current VIN = 3V — 0.45 1.5 mA VIN = 0V — 55 150 µA VDD Operating Input Voltage 4.5 — 18 V ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage ............................................... – 5V to > VDD Input Current (VIN > VDD) .........................................50mA Power Dissipation, TA ≤ 70°C PDIP ...............................................................730mW SOIC ...............................................................470mW CerDIP ............................................................ 800mW 5-Pin TO-220 ...................................................... 1.6W Package Power Dissipation (TA ≤ 70°C) 5-Pin TO-220 (With Heat Sink) ......................... 1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/ °C SOIC ............................................................. 4mW/ °C CerDIP ....................................................... 6.4mW/ °C 5-Pin TO-220 .............................................. 12mW/ °C Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ........................................ 10°C/W Storage Temperature Range ................ – 65 °C to +150°C Operating Temperature (Chip) .............................. +150 °C Operating Temperature Range (Ambient) C Version ............................................... 0 °C to +70°C I Version ........................................... – 25 °C to +85°C E Version .......................................... – 40 °C to +85°C M Version ....................................... – 55 °C to +125°C Lead Temperature (Soldering, 10 sec) ................. +300 °C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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