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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TC7662BEOA 데이터시트(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC7662BEOA 데이터시트(HTML) 2 Page - TelCom Semiconductor, Inc |
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2 / 9 page  4-84 TELCOM SEMICONDUCTOR, INC. ELECTRICAL CHARACTERISTICS: V+ = 5V, TA = +25°C, OSC = Free running, Test Circuit Figure 2, Unless Otherwise Specified. Symbol Parameter Test Conditions Min Typ Max Unit I+ Supply Current (Note 3) RL = ∞, +25°C — 80 160 µA (Boost pin OPEN OR GND) 0 °C ≤ TA ≤ +70°C — — 180 µA – 40 °C ≤ TA ≤ +85°C — — 180 µA – 55 °C ≤TA ≤ +125°C — — 200 µA I+ Supply Current 0 °C ≤ TA ≤ +70°C — — 300 µA (Boost pin = V+) – 40 °C ≤ TA ≤ +85°C 350 – 55 °C ≤ TA ≤ +125°C 400 V + H Supply Voltage Range, High RL = 10 kΩ, LV Open, TMIN ≤ TA ≤ TMAX 3.0 — 15 V (Note 4) V + L Supply Voltage Range, Low RL = 10 kΩ, LV to GND, TMIN ≤ TA ≤ TMAX 1.5 — 3.5 V ROUT Output Source Resistance IOUT = 20 mA, 0°C ≤ TA ≤ +70°C — 65 100 Ω IOUT = 20 mA, – 40°C ≤ TA ≤ +85°C — — 120 Ω IOUT = 20 mA, - 55°C ≤ TA ≤ +125°C — — 150 Ω IOUT = 3 mA, V+ = 2V, LV to GND , — — 250 Ω 0 °C ≤ TA ≤ +70°C IOUT = 3 mA, V+ = 2V, LV to GND , — — 300 Ω – 40 °C ≤ TA ≤ +85°C IOUT = 3 mA, V+ = 2V, LV to GND , — — 400 Ω – 55 °C ≤ TA ≤ +125°C fOSC Oscillator Frequency COSC = 0, Pin 1 Open or GND 5 10 — kHz Pin 1 = V+ 35 PEff Power Efficiency RL = 5 kΩ 96 96 — % TMIN ≤ TA ≤ TMAX 95 97 VOUTEff Voltage Conversion Efficiency RL = ∞ 99 99.9 — % ZOSC Oscillator Impedance V+ = 2V — 1 — M Ω V+ = 5V — 100 — k Ω NOTES: 1. Connecting any terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to “power up” of the TC7662B. 2. Derate linearly above 50 °C by 5.5 mW/°C. 3. In the test circuit, there is no external capacitor applied to pin 7. However, when the device is plugged into a test socket, there is usually a very small but finite stray capacitance present, of the order of 5pF. 4. The TC7662B can operate without an external diode over the full temperature and voltage range. This device will function in existing designs which incorporate an external diode with no degradation in overall circuit performance. ABSOLUTE MAXIMUM RATINGS* Supply Voltage ...................................................... +16.5V LV, Boost and OSC Inputs Voltage (Note 1) V+<5.5V ..................................... – 0.3V to (V+ + 0.3V) >5.5V .................................. (V+ – 5.5V) to (V+ + 0.3V) Current Into LV (Note 1) V+ >3.5V ............................................................. 20 µA Output Short Duration (VSUPPLY ≤ 5.5V) ....................................... Continuous Power Dissipation (TA ≤ 70°C) (Note 2) Plastic DIP ...................................................... 730mW SO .................................................................. 470mW Operating Temperature Range C Suffix .................................................. 0 °C to +70°C E Suffix ............................................. – 40 °C to +85°C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER |
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