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TC96C555EPA 데이터시트(PDF) 1 Page - TelCom Semiconductor, Inc |
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TC96C555EPA 데이터시트(HTML) 1 Page - TelCom Semiconductor, Inc |
1 / 9 page 4-159 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 TC96C55 4 3 2 VDD 1V 2V VREF 1V 2V 3V Q1 Q2 1 3V 3V ISOURCE +4V Q3 ISINK 7 6 OUTPUT A OUTPUT B 5 GND VREF VR1 VIN VR2 8 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR ORDERING INFORMATION Operating Part No. Package Temp Range TC96C555COA 8-Pin SOIC 0 °C to +70°C TC96C555CPA 8-Pin Plastic DIP 0 °C to +70°C TC96C555EOA 8-Pin SOIC – 40 °C to +85°C TC96C555EPA 8-Pin Plastic DIP – 40 °C to +85°C TC96C555MJA 8-Pin CerDIP – 55 °C to +125°C PIN CONFIGURATIONS (DIP and SOIC) 18 27 36 45 VDD VR1 VREF VIN VR2 OUT OUT GND VR1 VREF VIN VR2 VDD OUT OUT GND 18 2 7 36 45 TC96C555CPA TC96C555EPA TC96C555COA TC96C555EOA FUNCTIONAL BLOCK DIAGRAM TC96C555-7 10/21/96 FEATURES s Controllable Duty Cycle s Wide Operating Range ............................. 5V to 18V s High Peak Output Current .................................. 3A s High Capacitive Load Drive Capability .................................... 1800pF in 20nsec s Short Delay Time ............................. < 150nsec Typ APPLICATIONS s Fixed Frequency Power Oscillator s Voltage Controlled Oscillator s Low Power Buck Regulator Supply s MOSFET Driver s Simple diode inverters and doublers GENERAL DESCRIPTION The TC96C555 Power Oscillator is an easily pro- grammed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits where high-current pulses are needed in an economical form. The TC96C555 uses TelCom Semiconductors' new Tough CMOS™ process. The output drive capability is similar to the TC4423/4/5 MOSFET Drivers, which can switch in 25nsec into a capacitive load of 1,800pF. The TC96C555 will not latch up under any conditions within their power and voltage ratings. They can accept, without dam- age, up to 1.5A of reverse current (of either polarity) being forced back into the output. All terminals are also fully protected against up to 4kV of electrostatic discharge. The peak output is rated at 3A. Split outputs permits driving of an external pair of MOSFETS, with controllable cross conduc- tion between upper and lower devices. |
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