전자부품 데이터시트 검색엔진 |
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2SA1687 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1687 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB =-40V , IE =0 -0.1 ìA Emitter cutoff current IEBO VEB = -120V , IC =0 -0.1 ìA DC current Gain hFE VCE =-6V , IC = -1mA 135 600 Gain bandwidth product fT VCE =-6V , IC = -1mA 130 MHz Collector-to-emitter saturation voltage VCE(sat) IC =-50mA , IB =-5mA -0.25 -0.5 V Base-to-emitter saturation voltage VBE(sat) IC =-50mA , IB =-5mA -0.85 -1.2 V Collector-to-base breakdown voltage V(BR)CBO IC =-10ìA , IE =0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = -50 V Emitter-to-base breakdown voltage V(BR)EBO IE =-10ìA , IC =0 -15 V Common base output capacitance Cob VCB = -6V , f = 1MHz 3.5 pF Delay time ton 50 ns Storage time tstg 460 ns Fall time tf 60 ns 2SA1687 hFE Classification Marking Rank 5 6 7 hFE 60 120 90 180 135 270 D |
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유사한 설명 - 2SA1687 |
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