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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC4390 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4390 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type Transistors 1 www.kexin.com.cn NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 15 V Collector current IC 2A Collector current (pulse) ICP 4A Base current IB 0.4 A Collector dissipation PC 500 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 |
유사한 부품 번호 - 2SC4390 |
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유사한 설명 - 2SC4390 |
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