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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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KDD3670 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDD3670 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1. Gate 2. Drain 3. Source 100V N-Channel PowerTrench MOSFET KDD3670 Features 34 A, 100 V. RDS(ON) = 32m @VGS =10V RDS(ON) = 35m @VGS =6V Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1) 34 A Drain Current Pulsed 100 A Power dissipation @ TC=25 (Note 1) 83 Power dissipation @ Ta=25 (Note 1a) 3.8 Power dissipation @ Ta=25 (Note 1b) 1.6 Operating and Storage Temperature TJ,TSTG -55to175 Thermal Resistance Junction to Case R JC 1.8 /W Thermal Resistance Junction to Ambient R JA 96 /W ID PD W |
유사한 부품 번호 - KDD3670 |
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유사한 설명 - KDD3670 |
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