전자부품 데이터시트 검색엔진 |
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KFS20 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KFS20 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 www.kexin.com.cn NPN Medium Frequency Transistor KFS20(BFS20) Features Low current (max. 25 mA) Low voltage (max. 20 V) Very low feedback capacitance (typ. 350 fF). Marking Marking G1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 4V Collector current IC 25 mA Peak collector current ICM 25 mA power dissipation PD 250 mW Thermal resistance from junction to ambient * Rth j-a 500 K/W Junction temperature Tj 150 Storage temperature Tstg -65to+150 * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit ICBO IE =0;VCB = 20 V 100 nA ICBO IE =0;VCB =20V;Tj = 100 10 A Emitter cutoff current IEBO IC =0;VEB = 4V 100 nA DC current gain hFE IC =7mA;VCE = 10 V 40 85 Base to emitter voltage VBE IC =7mA;VCE = 10V 740 900 mV Collector capacitance CC IE =ie =0;VCB =10V;f=1MHz 1 pF Freedback capacitance Cre IC=0,VCB=10V,f=1MHz 350 pF Transition frequency fT IC =5mA; VCE =10 V; f = 100 MHz 275 450 MHz Collector cutoff current |
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유사한 설명 - KFS20 |
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