2SJ530S datasheet(1/1 Pages) KEXIN

부품명	2SJ530S

상세설명	Hight Speed Power Switching

Download	1 Pages

Scroll/Zoom	100%

제조업체	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

홈페이지	http://www.kexin.com.cn/index.asp

Logo

1 / 1 page

SMD Type

IC

www.kexin.com.cn

1

MOSFET

SMD Type

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1Gate

2Drain

3Source

Hight Speed Power Switching

2SJ530S

Features

Low on-resistance

RDS(on) =0.08

typ.

High speed switching

4V gate drive devices.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Drain to source voltage

VDSS

-60

V

Gate to source voltage

VGSS

20

V

Drain current (DC)

ID

-15

A

Drain current(pulse) *

ID

-60

A

Power dissipation

PD

30

W

Channel temperature

Tch

150

Storage temperature

Tstg

-55to+150

*PW

10

s, duty cycle

1%

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain to source breakdown voltage

VDSS

ID=-10mA,VGS=0

-60

V

Gate to source breakdown voltage

VGSS

IG=

100

A,VDS=0

20

V

Drain cut-off current

IDSS

VDS=-60V,VGS=0

-10

A

Gate leakage current

IGSS

VGS=

16V,VDS=0

10

A

Gate to source cutoff voltage

VGS(off)

VDS=-10V,ID=-1mA

-1.0

-2.0

V

Forward transfer admittance

Yfs

VDS=-10V,ID=-8A

6.5

11

S

VGS=-10V,ID=-8A

0.08

0.10

VGS=-4.0V,ID=-8A

0.11

0.16

Input capacitance

Ciss

850

pF

Output capacitance

Coss

420

pF

Reverse transfer capacitance

Crss

110

pF

Turn-on delay time

td(on)

12

ns

Rise time

tr

75

ns

Turn-off delay time

td(off)

125

ns

Fall time

tf

75

ns

Drain to source on-state resistance

RDS(on)

VDS=-10V,VGS=0,f=1MHZ

VGS(on)=-10V,ID=--8A ,RL=3.75

유사한 부품 번호 - 2SJ530S

제조업체	부품명	데이터시트	상세설명
Hitachi Semiconductor	2SJ530S	57Kb / 9P	Silicon P Channel MOS FET High Speed Power Switching
Renesas Technology Corp	2SJ530S	94Kb / 9P	Silicon P Channel MOS FET
Renesas Technology Corp	2SJ530STL-E	94Kb / 9P	Silicon P Channel MOS FET
VBsemi Electronics Co.,...	2SJ530STL-E	988Kb / 8P	P-Channel 60-V (D-S) MOSFET

More results

유사한 설명 - 2SJ530S

제조업체	부품명	데이터시트	상세설명
Guangdong Kexin Industr...	2SJ527S	45Kb / 1P	Hight Speed Power Switching
	2SJ506S	52Kb / 2P	Hight Speed Power Switching
	2SJ528S	45Kb / 1P	Hight Speed Power Switching
	2SJ529S	45Kb / 1P	Hight Speed Power Switching
Toshiba Semiconductor	SH400R28B	195Kb / 4P	Alloy-Free Hight Speed Thyristor(High Power Control Application)
Rohm	SE2002-DC90A	80Kb / 5P	Hight Speed Thermal Printhead (8dots / mm)
	SE2002-DC94A	77Kb / 5P	Hight Speed Thermal Printhead (8dots / mm)
	SE2003-DC90A	85Kb / 6P	Hight Speed Thermal Printhead (8dots / mm)
	SE2004-DC90A	87Kb / 6P	Hight Speed Thermal Printhead (8dots / mm)
	NF2004-VA20A	75Kb / 5P	Hight Speed Thermal Printhead (8dots / mm)

More results

2SJ530S 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SJ530S 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

유사한 부품 번호 - 2SJ530S

유사한 설명 - 2SJ530S

Html Pages

1

데이터시트 다운로드

링크 URL