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2SA1095 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1095 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1095 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=0 B -160 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A B -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 240 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 fT Transition frequency IC=-1A ; VCE=-10V 60 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 350 pF hFE classifications R O Y 55-110 80-160 120-240 2 |
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