TSAL5300-FSZ datasheet(2/8 Pages) VISHAY

부품명	TSAL5300-FSZ

상세설명	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

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제조업체	VISHAY [Vishay Siliconix]

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Document Number 81008

Rev. 1.7, 08-Mar-05

VISHAY

TSAL5300

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Optical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

VF

1.35

1.6

V

IF = 1 A, tp = 100 µsVF

2.6

3

V

Temp. Coefficient of VF

IF = 100 mA

TKVF

- 1.875

mV/K

Reverse Current

VR = 5 V

IR

10

µA

Junction capacitance

VR = 0, f = 1 MHz, E = 0

Cj

25

pF

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Radiant Intensity

IF = 100 mA, tp = 20 ms

Ie

30

45

150

mW/sr

IF = 1 A, tp = 100 µsIe

260

350

mW/sr

Radiant Power

IF = 100 mA, tp = 20 ms

φe

35

mW

Temp. Coefficient of

φe

IF = 20 mA

TK

φe

- 0.6

%/K

Angle of Half Intensity

ϕ

± 22

deg

Peak Wavelength

IF = 100 mA

λp

940

nm

Spectral Bandwidth

IF = 100 mA

∆λ

50

nm

Temp. Coefficient of

λp

IF = 100 mA

TK

λp

0.2

nm/K

Rise Time

IF = 100 mA

tr

800

ns

IF = 1 A

tr

500

ns

Fall Time

IF = 100 mA

tf

800

ns

IF = 1 A

tf

500

ns

Virtual Source Diameter

method: 63 % encircled energy

∅

2.3

mm

Figure 1. Power Dissipation vs. Ambient Temperature

0

50

100

150

200

250

Tamb- Ambient Temperature (

°C)

94 7957

RthJA

20

40

60

80

100

0

Figure 2. Forward Current vs. Ambient Temperature

0

20406080

0

50

100

150

200

250

Tamb– Ambient Temperature ( °C )

100

96 11986

RthJA

유사한 부품 번호 - TSAL5300-FSZ

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TSAL5300-MSZ	214Kb / 6P	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Rev. 1.9, 04-Sep-08
Vishay Siliconix	TSAL5300-MSZ	216Kb / 6P	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs Rev. 2.0, 29-Jun-09

More results

유사한 설명 - TSAL5300-FSZ

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TSML3710-GS08	135Kb / 8P	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rev. 1.6, 21-Feb-07
	TSAL5100	141Kb / 6P	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rev. 1.3, 08-Mar-05
	TSML1000	353Kb / 10P	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rev. 1.8, 08-Mar-05
	TSUS4300	110Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.9, 20-Oct-15
	TSKS5400	144Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.4, 03-Sep-13
	CQY37N	281Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022
	TSUS5200	112Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.2, 29-Jun-09
	TSUS6202	109Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.0, 29-Sep-15
	TSUS5200	109Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.3, 24-Aug-11
	TSUS4400	113Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021

More results

TSAL5300-FSZ 데이터시트(PDF) 2 Page - Vishay Siliconix

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