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STB434S 데이터시트(PDF) 1 Page - SamHop Microelectronics Corp. |
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STB434S 데이터시트(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STB/P434S Symbol VDS VGS IDM A ID Units Parameter 40 60 176 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 40V 60A 11.5 @ VGS=4.5V 9.2 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-263 Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Nov,14,2008 1 Details are subject to change without notice. TC=25°C W PD °C 62.5 -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 62.5 °C/W Thermal Resistance, Junction-to-Ambient R JA 2 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Sigle Pulse Avalanche Energy d TC=70°C W a a a 91 48 40 STB SERIES TO-263(DD-PAK) G S D STP SERIES TO-220 S D G S G D a |
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