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2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1168 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER(SUS) Collector-emitter sustaining voltage IC=5A; RBE=10Ω;L=2mH 800 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V VCB=750V; IE=0 0.1 ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA hFE DC current gain IC=1A ; VCE=4V 9 25 tf Fall time 0.5 μs ts Storage time IC=1.5 A; IB1=0.2A; IB2=-0.7A 2 μs hFE Classifications Q P 9-18 15-25 |
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