전자부품 데이터시트 검색엔진 |
|
2SD1712 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD1712 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1712 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=100V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE -2 DC current gain IC=1A ; VCE=5V 60 200 hFE -3 DC current gain IC=3A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF fT Transition frequency IC=0.5A ; VCE=5V 20 MHz hFE-2 classifications Q S P 60-120 80-60 100-200 |
유사한 부품 번호 - 2SD1712 |
|
유사한 설명 - 2SD1712 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |