전자부품 데이터시트 검색엔진 |
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2SC1157 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SC1157 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1157 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat Base-emitter saturation voltage IC=300mA IB=30m A 1.5 V V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=100µA; IC=0 5 V ICBO Collector cut-off current VCB=110V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE DC current gain IC=300mA ; VCE=4V 20 300 fT Transition frequency IE=100mA ; VCB=10V 70 MHz |
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