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SI4160DY 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI4160DY 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69069 S-83092-Rev. A, 29-Dec-08 Vishay Siliconix Si4160DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.005 0.010 0.015 0.020 012 3 45 67 8 910 TJ = 25 °C TJ = 125 °C ID =15A VGS -Gate-to-Source Voltage (V) 0 34 68 102 136 170 0 1 1 1 0 0 . 0 0.01 0.1 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 1ms 10 ms 1s 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* DC 10 s BVDSS Limited 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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