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SSG6679 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSG6679
상세설명  P-Channel Enhancement Mode Power Mos.FET
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG6679 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in copper pad of FR4 board;125 C/W when mounted on min. copper pad.
2
o
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
640
f=1.0MHz
26
S
VDS=-10V, ID=-14A
_
_
_
_
Crss
Gfs
Reverse Transfer Capacitance
Forward Transconductance
37
3
25
13
11
58
43
2860
950
nC
nS
pF
VGS=0V
VDS=-25V
VDD=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Ω
Ω
ID=-14A
VDS=-24V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
9
13
mΩ
VGS=-10V, ID=-14A
VGS=-4.5V, ID=-11A
_
_
60
4580
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
RDS(ON)
30
0.03
.0
-3.0
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
-
-
-1
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
BVDS/ Tj
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj= 70 )
VGS(th)
IGSS
oC
oC
2
2
2
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
_
_
_
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
48
46
=-14
S
A, VGS=0V.
2.0
=-
A, VGS=0V.
VSD
_
_
IS
V
-1.2
2
_
_
I
dl/dt=100A/us
Source-Drain Diode
Pulse width limited by Max. junction temperature.
2
Elektronische Bauelemente
SS
G6679
-14A, -30V,RDS(ON) 9m
P-Channel Enhancement Mode Power Mos.FET
Ω


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