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SSG9685 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9685 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 80 0.073 1.0 3.0 100 1 25 45 50 19 5 10 11 6 36 22 1710 135 98 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=40V ID=1A VGS=10V RG=3.3 RD=40 Ω Ω ID=5A VDS=64V VGS=4.5V VGS=10V, ID=5.3A VGS=4.5V, ID=3A VGS=0V, ID=250uA VGS= 2 V ± 0 VDS=80V,VGS=0 VDS=64V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forward Transconductance Gfs S 9 VDS=10V, ID=5A _ _ _ 2730 30 2 2 2 C o C o C o C o o Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=2A,VGS=0V. 84 =5A, VGS=0V. V 1.2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. Reverse Recovery Time Reverse Recovery Charge _ _ 42 _ _ Trr Qrr nC nS dl/dt=100A/us 2 IS ≦ ≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board O C/W when mounted on min. copper pad. 2 ; 125 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSG 9685 5.3A, 80V,RDS(ON) 45m N-Channel Enhancement Mode Power Mos.FET Ω |
유사한 부품 번호 - SSG9685 |
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유사한 설명 - SSG9685 |
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