SSM2308 datasheet(2/4 Pages) SECOS

부품명	SSM2308

상세설명	N-Channel Enhancement Mode Power Mos.FET

Download	4 Pages

Scroll/Zoom	100%

제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

Logo

2 / 4 page

Source-Drain Diode

01-Jun-2002 Rev. A

Page 2 of 4

Elektronische Bauelemente

Notes: 1.

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Forward On Voltage

Reverse Recovery Time

Trr

_

Reverse Recovery Change

_

Qrr

nC

nS

25

26

VSD

_

IS=1.2A, VGS=0V.

V

1.2

2

_

IS=3A, VGS=0V.

dl/dt=100A/us

2.Pulse width 300us, dutycycle 2%.

≦

3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.

2

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Electrical Characteristics( Tj=25 C Unless otherwise specified)

o

6

1.6

3

6

5

16

3

55

40

nC

nS

pF

VGS=0V

VDS=25V

f=1.0MHz

VDD=30V

ID=1A

VGS=10V

RG=3.3

RD=30

Ω

ID=3A

VDS=48V

VGS= 4.5V

_

25

160

220

uA

mΩ

VGS=10V, ID=2A

VGS=4.5V, ID=1.7A

VDS=48V,VGS=0

_

490

10

780

Total Gate Charge

Crss

Qg

Qgs

Qgd

Td(ON)

Td(Off)

Tr

Ciss

Coss

Tf

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

I

Static Drain-Source On-Resistance

Drain-Source Leakage Current(Tj=70 )

oC

2

RDS(ON)

60

0.05

1.0

3.0

100

10

±

V

V/

Reference to 25C, ID=1m

o

oC

V

nA

uA

5

VGS=0V, ID=250uA

VGS= 20V

±

VDS=60V,VGS=0

VDS=VGS, ID=250uA

_

S

VDS=5V, ID=3A

_

A

BVDSS

BVDS/ Tj

DSS

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

VGS(th)

IGSS

Forward Transconductance

Gfs

oC

Pulse width limited by Max. junction temperature.

SSM2308

3A, 60V,RDS(ON) 160m

N-Channel Enhancement Mode Power Mos.FET

Ω

유사한 부품 번호 - SSM2308

제조업체	부품명	데이터시트	상세설명
Texas Instruments	SSM2301	366Kb / 19P	[Old version datasheet] Filterless High Efficiency Mono 1.4 W Class-D Audio Amplifier
Analog Devices	SSM2301	430Kb / 16P	Filterless High Efficiency Mono 1.4W Class-D Audio Amplifier REV. A
	SSM2301-EVALZ	430Kb / 16P	Filterless High Efficiency Mono 1.4W Class-D Audio Amplifier REV. A
	SSM2301CPZ	430Kb / 16P	Filterless High Efficiency Mono 1.4W Class-D Audio Amplifier REV. A
Texas Instruments	SSM2301CPZ-R2	366Kb / 19P	[Old version datasheet] Filterless High Efficiency Mono 1.4 W Class-D Audio Amplifier

More results

유사한 설명 - SSM2308

제조업체	부품명	데이터시트	상세설명
SeCoS Halbleitertechnol...	SID3055	1Mb / 6P	N-Channel Enhancement Mode Power Mos.FET
	SST2604	857Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SSD40N03	1Mb / 5P	N-Channel Enhancement Mode Power Mos.FET
	SSE9973	852Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SSG4424	378Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SSG9973	342Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SSM2310	896Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SSM9973	478Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	STT8205S	698Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SMG138K	307Kb / 4P	N-Channel Enhancement Mode Power Mos.FET
	SMG2300	472Kb / 4P	N-Channel Enhancement Mode Power Mos.FET

More results

SSM2308 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSM2308 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

유사한 부품 번호 - SSM2308

유사한 설명 - SSM2308

Html Pages

1 2 3 4

데이터시트 다운로드

링크 URL