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SST2603 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SST2603
상세설명  P-Channel Enhancement Mode Power Mos.FET
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SST2603 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=55 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-20
-0.1
-0.5
-
1.2
100
-1
-10
53
250
10.6
2.32
3.68
5.9
3.6
32.4
2.6
1200
167
126
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDD=-15V
ID=-4.2A
VGS=-10V
RG=6
RD=3.6
Ω
Ω
ID=-4.2A
VDS=-16V
VGS=-4.5V
VGS=-10V, ID=-4.5A
VGS=-1.8V, ID=-1.0A
VGS=0V, ID=-250uA
VGS= 12V
±
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 , ID=-1mA
_
_
_
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IS=-1.2A, VGS=0V.
V
-1.2
2
Forward Transconductance
Gfs
S
9
VDS=-5V, ID=-2.8A
_
_
_
740
16
120
_
_
65
_
_
VGS=-4.5V, ID=-4.2A
VGS=-2.5V, ID=-2.0A
C
o
C
o
C
o
Reverse Recovery Time
Reverse Recovery Charge
Is=-4.2A, VGS=0V
_
_
_
_
Trr
Qrr
nC
nS
27.7
22
_
dl/dt=100A/us
C
o
2
2
2
2
Electrical Characteristics( Tj=25 C Unless otherwise specified)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Source-Drain Diode
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
o
Ω
01-Jun-2002 Rev. A
Page
2 of 4
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.


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