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SST2603 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SST2603 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET Total Gate Charge RDS(ON) Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=55 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -20 -0.1 -0.5 - 1.2 100 -1 -10 53 250 10.6 2.32 3.68 5.9 3.6 32.4 2.6 1200 167 126 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=-15V f=1.0MHz VDD=-15V ID=-4.2A VGS=-10V RG=6 RD=3.6 Ω Ω ID=-4.2A VDS=-16V VGS=-4.5V VGS=-10V, ID=-4.5A VGS=-1.8V, ID=-1.0A VGS=0V, ID=-250uA VGS= 12V ± VDS=-20V,VGS=0 VDS=-16V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA _ _ _ _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=-1.2A, VGS=0V. V -1.2 2 Forward Transconductance Gfs S 9 VDS=-5V, ID=-2.8A _ _ _ 740 16 120 _ _ 65 _ _ VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A C o C o C o Reverse Recovery Time Reverse Recovery Charge Is=-4.2A, VGS=0V _ _ _ _ Trr Qrr nC nS 27.7 22 _ dl/dt=100A/us C o 2 2 2 2 Electrical Characteristics( Tj=25 C Unless otherwise specified) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Source-Drain Diode Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. o ≦ ≦ Ω 01-Jun-2002 Rev. A Page 2 of 4 3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad. |
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