Dated : 22/03/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SA1664U
PNP Epitaxial Planar Transistor
High Current Application
The transistor is subdivided into two groups, O
and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
35
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
800
mA
Base Current
-IB
160
mA
Collector Power Dissipation
Ptot
500
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-55 to +150
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 700 mA
O
Y
hFE
hFE
hFE
100
160
35
-
-
-
200
320
-
-
-
-
Collector Cutoff Current
at -VCB = 35 V
-ICBO
-
-
100
nA
Emitter Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
30
-
-
V
Base Emitter Voltage
at -VCE = 1 V, -IC = 10 mA
-VBE
0.5
-
0.8
V
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
19
-
pF
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 20 mA
-VCE(sat)
-
-
0.7
V
Transition Frequency
at -VCE = 5 V, -IC = 10 mA
fT
-
120
-
MHz
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