2N3715 2N3716

3–14

Motorola Bipolar Power Transistor Device Data

10

0.1

Figure 3. Collector Current versus Base Current

IB, BASE CURRENT (mA)

7.0

5.0

3.0

2.0

1.0

0.07

0.05

0.01

0.2

0.5

1.0

5.0

20

50

100

1000

200

0.03

0.02

TJ = 175°C

2.0

10

500

– 40

°C

VCE = 2 V

SEE NOTES 1, 2

25

°C

2N3715, 2N3716

1000

0

Figure 4. Base Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

700

1.0

0.4

0.8

1.6

2.0

TJ = 175°C

1.2

– 40

°C

VCE = 2 V

SEE NOTE 2

25

°C

500

300

200

100

70

50

30

20

10

7.0

5.0

3.0

2.0

10

0.1

Figure 5. Collector Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

7

5

3

2

1

0.7

0.5

0.1

0.4

1.6

2.0

0.3

0.2

TJ = 175°C

0.8

1.2

– 40

°C

25

°C

2N3715, 2N3716

VCE = 2 V

SEE NOTE 2

0.1

0.2

0.3

0.5

0.7

NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C.

NOTE 2. Pulse test: pulse width

≈ 200 µsec, duty cycle ≈ 1.5%.