1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–32

Vdc

Collector – Base Voltage

VCBO

–32

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0)

V(BR)CEO

–32

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –1.0 mAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Collector Cutoff Current

(VCE = –32 Vdc)

(VCE = –32 Vdc, TA = 150°C)

ICES

—

—

–20

–20

nAdc

µAdc

1. FR– 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by BCW61BLT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BCW61BLT1

BCW61CLT1

BCW61DLT1

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

1

BASE

2

EMITTER