TPIC2701

7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

4

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

TPIC2701

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VF

Forward on-voltage

IF = 0.5 A

1

1.5

V

VBR

Breakdown voltage

IR = 1 µA

60

V

IR

Reverse leakage current

VR = 48 V

0.05

1

µA

trr(CD) Reverse-recovery time

IF = 0.1 A,

di/dt = 25 A/

µs,

90

ns

QRR

Total source-drain diode charge

F

VCD = 48 V,

µ

See Figure 1

100

nC

clamp diode characteristics over operating case temperature range (unless otherwise noted)

(see Note 4)

PARAMETER

TEST CONDITIONS

TPIC2701M

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VF

Forward voltage

IF = 0.5 A

1

1.5

V

V(BR)

Breakdown voltage

IR = 1 µA,

TC = 25°C

60

V

V(BR)

Breakdown voltage

IR = 1 mA

60

V

IR

Reverse leakage current

VR =48V

TC = 25°C

0.05

1

µA

IR

Reverse leakage current

VR = 48 V

10

µA

trr(SD) Reverse recovery time, source-to-drain

IF = 0.1 A,

di/dt = 25 A /

µs,

TC = 25°C

90

ns

QRR

Total source-to-drain diode charge

F

VCD = 48 V,

µ

C

See Figure 1

100

nC

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

PARAMETER

TEST CONDITIONS

TPIC2701

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

10

td(off)

Turn-off delay time

VDD = 25 V,

RL = 100 Ω,ten = 10 ns,

30

ns

tr

Rise time

DD

,

tdis = 10 ns,

L

,

See Figure 2

en

,

15

ns

tf

Fall time

5

Qg

Total gate charge

V48 V

I

0 25 A

V10 V

2.8

3.6

Qgs

Gate-source charge

VDS = 48 V,

See Figure 3

ID = 0.25 A,

VGS = 10 V,

1.6

2

nC

Qgd

Gate-drain charge

See Figure 3

1.2

1.6