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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TPS1120Y 데이터시트(PDF) 8 Page - Texas Instruments |
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TPS1120Y 데이터시트(HTML) 8 Page - Texas Instruments |
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8 / 12 page  TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 0.2 0.1 0 – 1 – 3 – 5 – 7 0.3 0.4 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs GATE-TO-SOURCE VOLTAGE 0.5 – 9 – 11 – 13 – 15 VGS – Gate-to-Source Voltage – V 0.6 0.7 ID = – 1 A TJ = 25°C Figure 9 Figure 10 – 1.2 – 1.1 – 1.3 – 1.4 GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE – 1.5 – 50 0 50 100 150 – 1 – 0.9 TJ – Junction Temperature – °C ID = – 250 µA – 6 – 4 – 2 0 02 3 5 – 8 GATE-TO-SOURCE VOLTAGE vs GATE CHARGE – 10 14 6 Qg – Gate Charge – nC VDS = – 10 V ID = – 1 A TJ = 25°C Figure 11 |
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