11

FN6583.1

April 3, 2009

increases. At 1MHz, Crosstalk is about -75dB in 50

Ω

systems, decreasing approximately 20dB per decade as

frequency increases.

Leakage Considerations

Reverse ESD protection diodes are internally connected

between each analog-signal pin, V+ and GND. One of these

diodes conducts if any analog signal exceeds the

recommended analog signal range.

Virtually all the analog switch leakage current comes from

the ESD diodes and reversed biased junctions in the switch

cell. Although the ESD diodes on a given signal pin are

identical and therefore fairly well balanced, they are reverse

biased differently. Each is biased to either the +Ring or -Ring

and the analog input signal. This means their leakages will

vary as the signal varies. The difference in the two diode

leakages to the +Ring or -Ring and the reverse biased

junctions at the internal switch cell constitutes the

analog-signal-path leakage current.

FIGURE 11. ON-RESISTANCE vs SUPPLY VOLTAGE vs

SWITCH VOLTAGE

FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE

FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE

FIGURE 14. ON-RESISTANCE vs SWITCH VOLTAGE

0

12

3

4

5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-1

-2

-3

-4

-5

-6

V+ = 1.8V

V+ = 2.7V

V+ = 4.5V

0

0.30

0.35

0.40

0.45

0.50

0.60

0.65

0.70

0.75

0.80

0.85

0.95

0.90

1.00

0.55

-3

-2

-1

12

345

V+ = 4.5V

T = +85°C

T = +25°C

T = -40°C

0

0.30

0.35

0.40

0.45

0.50

0.60

0.65

0.70

0.75

0.80

0.85

0.95

0.90

0.55

-3

-2

-1

12345

1.00

V+ = 4.3V

T = +85°C

T = +25°C

T = -40°C

0

1.05

0.35

0.45

0.65

0.75

0.85

0.95

0.55

-3

-2

-1

1

2

3

4

-5

-4

1.15

1.25

V+ = 2.7V

T = +85°C

T = +25°C

T = -40°C

ISL54065